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- High deposition rates due to a large silicon surface; different to the Sie-mens process where only toward the end of the process a large deposition Silicon Crystallization Technologies 7 Figure 4 Sketch of an FBR reactor: seeds entering the chamber from the top are levi- tated by the strong gas stream and settle down once they have reached ...

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In 2004 these activities were culminating in the development of a high-throughput in-line machine for large-scale low-temperature plasma deposition of silicon nitride [10, 11]. Providing high-quality SiNx passivation and antireflection layers on an industrial scale was a decisive contribution to the first mass production of reliable solar cells ...

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Consolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented.

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Silicon, in turn, is the starting point for silicon nitride, and silicon tetrachloride is the precursor for a wide range of silicon organics that can be pyrolyzed under controlled conditions to high-quality silicon carbide and silicon nitride. Silicon nitride and its Sialon derivatives, as well as silicon carbide, despite their tendency to oxidize, have the potential to meet many of the property targets set by the heat-engine market.

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The central part of the block is instead relatively uniform and produces good quality cells, in the range 12-15 % depending on the particular process used, the higher value provided by silicon nitride-based sequences. Typical values in the central part of the blocks are around 5-10 tzs, depending o~n the specific measurement system used.

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considering the heat transfer conditions applicable to the successful implementation of a water-cooled composite copper lining, four key criteria can be defined when considering the influence of process heat flux, q = hb δ t (where δ t = tb - tf and hb = convective heat transfer coefficient from bulk process liquid of temperature tb, to accretion .

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This is demonstrated in Fig. 6.11 where the effective lifetime τeff and the surface recombination velocity Seff are plotted as a function of the thickness d2.5 of the silicon-rich layer, topped by a 70 nm thick nitride film with n = 2.05. The silicon nitride was deposited by remote PECVD at a temperature of 400 °C.

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which hot metal and slag levels in the hearth are kept as low as possible (Van Laar et al., 2003), but without escape of hot gas (Nightingale et al., 2001; Tanzil et al., 2001).

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